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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD993 description high breakdown voltage- : v cbo = 1500v (min) collector-emitter saturation voltage- : v ce(sat) = 10v(max.)@ i c = 2.5a built-in damper diode applications designed for horizontal deflect ion output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 6 v i c collector current- continuous 3 a i cp collector current- peak 6 a p c collector power dissipation @ t c = 25 50 w t j junction temperature 150 t stg storage temperature range -40~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD993 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0; l= 35mh 600 v v (br)ebo emitter-base breakdown voltage i e = 200ma; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 2.5a; i b = 0.6a 10 v v be (sat) base-emitter saturation voltage i c = 2.5a; i b = 0.6a 1.3 v i ces collector cutoff current v cb = 1500v; v eb = 0 1.0 ma i ebo emitter cutoff current v eb = 4v; i c = 0 44 133 ma h fe dc current gain i c = 2a; v ce = 5v 3 15 isc website www.iscsemi.cn 2 |
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